Wavelength dependence of two photon and free carrier absorptions in InP
نویسندگان
چکیده
منابع مشابه
Wavelength dependence of two photon and free carrier absorptions in InP.
Nonlinear absorption at 1.064 and 1.535 microm wavelengths by two photon and free carrier absorption processes in undoped and Fe doped InP has been investigated. Using picosecond and nanosecond duration lasers, a self-consistent set of the two photon and free carrier absorption coefficients are experimentally obtained through nonlinear transmission measurements for the first time. Reduced carri...
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We present full-band structure calculations of temperatureand wavelength-dependent two-photon absorption coefficients and free-carrier absorption cross sections in GaAs, InP, and 0.92 eV-band gap Ga64In36As and InP60As40 alloys. The calculated coefficient decreases with increasing wavelength and band gap but increases with temperature. Using detailed band structure analysis, we identify various...
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Peter D. Olszak,1 Claudiu M. Cirloganu,1 Scott Webster,1 Lazaro A. Padilha,1 Shekhar Guha,2 Leonel P. Gonzalez,2 Srini Krishnamurthy,3 David J. Hagan,1 and Eric W. Van Stryland1,* 1CREOL & FPCE, The College of Optics and Photonics, University of Central Florida, 4000 Central Florida Boulevard, Orlando, Florida 32826, USA 2Air Force Research Laboratory, Materials and Manufacturing Directorate, W...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2009
ISSN: 1094-4087
DOI: 10.1364/oe.17.008741